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  advance product information september 2, 2005 1 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com wideband lna with agc tga2513 - epu key features ? frequency range: 2 - 23 ghz ? 17 db nominal gain ? > 30 db adjustable gain with vg2 ? 16 dbm nominal p1db ? < 2 db midband noise figure ? 0.15 um 3mi phemt technology ? nominal bias: vd = 5v, id = 75 ma ? chip dimensions: 2.09 x 1.35 x 0.10 mm (0.082 x 0.053 x 0.004 in) primary applications ? wideband gain block / lna ? x - ku point to point radio ? if & lo buffer applications product description the triquint tga2513 - epu is a compact lna/gain block mmic with agc via the control gate. the lna operates from 2 - 23 ghz and is designed using triquint?s proven standard 0.15 um gate phemt production process. the tga2513 - epu provides a nominal 16 dbm of output power at 1 db gain compression with a small signal gain of 17 db. typical noise figure is < 3 db from 2 - 18 ghz . the tga2513 - epu is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. the tga2513 - epu is 100% dc and rf tested on - wafer to ensure performance compliance. measured fixtured data vd = 5v, id= 75ma, vg2 = 2v, typical vg1 = - 60mv -16 -12 -8 -4 0 4 8 12 16 20 0 3 6 9 12 15 18 21 24 27 30 frequency (ghz) gain (db) -24 -18 -12 -6 0 6 12 18 24 30 return loss (db) gain input output 0 1 2 3 4 5 6 7 8 9 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) nf (db)
advance product information september 2, 2005 2 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 7 v 2/ v g1 gate 1 supply voltage range -2v to 0 v v g2 gate 2 supply voltage range -0.5 v to +3.5 v i + positive supply current 151 ma 2/ | i g | gate supply current 10 ma p in input continuous wave power 21 dbm 2 / p d power dissipation 1.5 w 2/, 3 / t ch operating channel temperature 117 c 4 /, 5 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 117 c 1 / these ratings represent th e maximum operable values for this device. 2 / current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4 / junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet. tga2513 - epu table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i dss , q1- q10 saturated drain current -- 216 ma v p , q1-q10 pinch-off voltage -1 0 v v bvgd, q1-q10 breakdown voltage gate- drain -30 -5 v v bvgs, q1-q10 breakdown voltage gate- source -30 -5 v note: q1-q10 is a 720um size fet.
advance product information september 2, 2005 3 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com table iv thermal information* parameter test conditions t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 5 v i d = 75 ma pdiss = 0.375 w 82 32 4.5 e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. tga2513 - epu table iii rf characterization table (t a = 25 c, nominal) vd = 5v, id = 75 ma vg2 = 2v symbol parameter test condition nominal units gain small signal gain f = 2-23 ghz 17 db irl input return loss f = 2-23 ghz 14 db orl output return loss f = 2-23 ghz 14 db nf noise figure f = 3-13 ghz f = 2-18 ghz 2 < 3 db p 1db output power @ 1db gain compression f = 2-23 ghz 16 dbm
advance product information september 2, 2005 4 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com tga2513 - epu measured fixtured data vd = 5v, id= 75ma, typical vg1 = - 60mv, vg2 = 2v -16 -12 -8 -4 0 4 8 12 16 20 0 3 6 9 12 15 18 21 24 27 30 frequency (ghz) gain (db) -24 -18 -12 -6 0 6 12 18 24 30 return loss (db) gain input output 0 1 2 3 4 5 6 7 8 9 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) nf (db)
advance product information september 2, 2005 5 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com tga2513 - epu measured fixtured data vd = 5v, typical vg1 = - 60 mv vd = 5v, id= 75ma, typical vg1 = - 60mv,vg2 = 2v 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) output power (dbm) p2db p1db -20 -15 -10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) gain (db) id=73ma vg2= 2.0v id=42ma vg2=0.16v id=21ma vg2=-0.05v id=15ma vg2=-0.25v id=11ma vg2=-0.33v id=9ma vg2=-0.37v id=5ma vg2=-0.43v id=3ma vg2=-0.47v
advance product information september 2, 2005 6 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com tga2513 - epu rc 31_29 5 10 15 20 25 30 35 0 3 6 9 12 15 18 21 24 27 30 frequency (ghz) toi (dbm) 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 fundamental output power per tone (dbm) imd3 (dbc) 2 ghz 10 ghz 14 ghz 18 ghz 20 ghz 22 ghz 24 ghz measured fixtured data vd = 5v, id= 75ma, typical vg1 = - 60mv, vg2 = 2v
advance product information september 2, 2005 7 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com 0 5 10 15 20 25 30 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) output toi (dbm) vg2=2.00v vg2=1.75v vg2=1.50v vg2=1.25v vg2=1.00v vg2=0.75v vg2=0.50v vg2=0.25v vg2=0.0v vg2=-0.25v tga2513 - epu measured fixtured data vd = 5v, id= 75ma, pin = - 10 dbm
advance product information september 2, 2005 8 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com tga2513 - epu mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic d ischarge. proper precautions should be observed during handling, assembly and test. 0.000 (0.000) 0.235 (0.009) 1.242 (0.049) 1.351 (0.053) 0.973 (0.038) 1.210 (0.048) 0.099 (0.004) 0.000 (0.000) 0.095 (0.004) 1.971 (0.078) 2.091 (0.082) 0.103 (0.004) 1.208 (0.048) 1.980 (0.078) 1 2 3 4 5 units: millimeters (inches) thickness: 0.100 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pad #1: rf in 0.100 x 0.125 (0.004 x 0.005) bond pad #2: vg2 0.100 x 0.100 (0.004 x 0.004) bond pad #3: vd 0.100 x 0.125 (0.004 x 0.005) bond pad #4: rf out 0.100 x 0.125 (0.004 x 0.005) bond pad #5: vg1 0.100 x 0.100 (0.004 x 0.004)
advance product information september 2, 2005 9 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic d ischarge. proper precautions should be observed during handling, assembly and test. tga2513 - epu recommended assembly diagram 100 pf 100 pf vg2 vd vg1 rf in rf out
advance product information september 2, 2005 10 note: devices designated as epu are typically early in their cha racterization process prior to finalizing all electrical and pro cess specifications. specifications are subject to change without not ice triquint semiconductor texas phone: (972)994 - 8465 fax: (972)994 - 8504 email: info - mmw@tqs.com web: www.triquint.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic d ischarge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. tga2513 - epu


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